STD65NF06, STP65NF06 دیتاشیت

STD65NF06, STP65NF06

مشخصات دیتاشیت

نام دیتاشیت STD65NF06, STP65NF06
حجم فایل 337.207 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت STD65NF06, STP65NF06

دانلود دیتاشیت

سایر مستندات

STP65NF06 14 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP65NF06
  • Power Dissipation (Pd): 110W
  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 60A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 14mΩ@10V,30A
  • Package: TO-220AB-3
  • Manufacturer: STMicroelectronics
  • Series: STripFET™ II
  • Packaging: Tube
  • Part Status: Last Time Buy
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • Base Part Number: STP65N
  • detail: N-Channel 60V 60A (Tc) 110W (Tc) Through Hole TO-220AB

محصولات مشابه